Abstract
The surface preparation technology of CdSe crystals used for room temperature gamma-ray detection has been studied. X-ray fluorescense analysis of the surface of the crystal exposed to the Br-Meth.anol etchant revealed the production of CdBr2 compound as a result of the crystal-etchant reaction. TheCdBr2 “poisoning” causes high surface leakage currents increasing significantly the electronic noise of the device. A modified etching process has been developed in present work allowing to reduce greatly the surface leakage. Prominent reduction in the noise threshold with a simultaneous improvement of the energy resolution of CdSe detectors is reported.
| Original language | English |
|---|---|
| Pages (from-to) | 407-410 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 1986 |