Improved technique for HgI2 crystal growth

H. Hermon; M. Roth; M. Schieber

doi:10.1016/0168-9002(92)91209-R

Improved technique for HgI₂ crystal growth

H. Hermon^*
, M. Roth
, M. Schieber

^*Corresponding author for this work

The Institute of Applied Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A modified vapor growth furnace for HgI₂ and a new two-parts growth ampoule containing a removable seal has been developed. The new ampoule allows several growth sequences during the same or different experiments. The new furnace is also equipped with a 3D moving cold finger for the control of selective nucleation, which reduces the total time required for a given growth run. The new ampoule permits introduction of a large variety of substrates (up to 5×5 cm). Controlled amounts of doping materials are move easily charged into the new ampoule even in the middle of a growth run.

Original language	English
Pages (from-to)	432-434
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	322
Issue number	3
DOIs	https://doi.org/10.1016/0168-9002(92)91209-R
State	Published - 15 Nov 1992

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AU - Schieber, M.

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Improved technique for HgI₂ crystal growth

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