InAs-GaSb laser: Prospects for efficient terahertz emission

L. D. Shvartsman; B. Laikhtman

doi:10.1063/1.2993232

InAs-GaSb laser: Prospects for efficient terahertz emission

L. D. Shvartsman, B. Laikhtman

Racah Institute of Physics

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Abstract

We suggest to use InAs/GaSb coupled quantum wells for terahertz lasing. In these heterostructures terahertz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are (i) a large value of the interband dipole matrix element and (ii) easier maintenance of population inversion. These advantages lead to a gain of two orders of magnitude higher than that for intersubband lasing. Even higher gain can be obtained in special design InAs/GaSb W -structures where a hybridization gap of 1-3 THz is formed and optical density of states is singular.

Original language	English
Article number	131104
Journal	Applied Physics Letters
Volume	93
Issue number	13
DOIs	https://doi.org/10.1063/1.2993232
State	Published - 2008

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AB - We suggest to use InAs/GaSb coupled quantum wells for terahertz lasing. In these heterostructures terahertz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are (i) a large value of the interband dipole matrix element and (ii) easier maintenance of population inversion. These advantages lead to a gain of two orders of magnitude higher than that for intersubband lasing. Even higher gain can be obtained in special design InAs/GaSb W -structures where a hybridization gap of 1-3 THz is formed and optical density of states is singular.

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InAs-GaSb laser: Prospects for efficient terahertz emission

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