InAs/GaSb-based lateral current injection laser

B. Laikhtman; S. Luryi; G. Belenky

doi:10.1063/1.1410888

InAs/GaSb-based lateral current injection laser

B. Laikhtman^*
, S. Luryi
, G. Belenky

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We propose a contact structure for InAs/GaSb multilayers, such that electrons and holes are selectively injected in alternating layers. This enables the implementation of a far-infrared lateral current injection laser based on the InAs/GaSb superlattice. Preliminary calculation of the gain shows that both surface- and edge-emitting designs are possible.

Original language	English
Pages (from-to)	5478-5482
Number of pages	5
Journal	Journal of Applied Physics
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.1410888
State	Published - Dec 2001

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abstract = "We propose a contact structure for InAs/GaSb multilayers, such that electrons and holes are selectively injected in alternating layers. This enables the implementation of a far-infrared lateral current injection laser based on the InAs/GaSb superlattice. Preliminary calculation of the gain shows that both surface- and edge-emitting designs are possible.",

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AB - We propose a contact structure for InAs/GaSb multilayers, such that electrons and holes are selectively injected in alternating layers. This enables the implementation of a far-infrared lateral current injection laser based on the InAs/GaSb superlattice. Preliminary calculation of the gain shows that both surface- and edge-emitting designs are possible.

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InAs/GaSb-based lateral current injection laser

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