InAs/GaSb interfaces; the problem of boundary conditions

Smadar De-Leon*, B. Laikhtman, L. D. Shvartsman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We present here a derivation of phenomenological boundary conditions for envelope functions at the interface between an InAs layer and a GaSb layer. The overlap of the valence band of GaSb with the conduction band of InAs leads to a coupling between electrons with total angular momentum 1/2 and holes with total angular momentum 3/2. The method that we use to match these wave-functions is that of the minimizing of the total energy of the system including the surface energy. We consider the different spinor characters of the states explicitly, and derive the required boundary conditions, which are not dependent on any specific microscopic model. The proposed approach is general, and may be used to obtain boundary conditions for other complicated cases of interfaces.

Original languageAmerican English
Pages (from-to)8715-8729
Number of pages15
JournalJournal of Physics Condensed Matter
Issue number39
StatePublished - 5 Oct 1998


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