InAsSb based mid-infrared optical upconversion devices operable at thermoelectric temperatures

A. Boucherif; D. Ban; H. Luo; E. Dupont; Z. R. Wasilewski; H. C. Liu; Y. Paltiel; A. Raizman; A. Sher

doi:10.1049/el:20082782

InAsSb based mid-infrared optical upconversion devices operable at thermoelectric temperatures

A. Boucherif^*
, D. Ban
, H. Luo
, E. Dupont
, Z. R. Wasilewski
, H. C. Liu
, Y. Paltiel
, A. Raizman
, A. Sher

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06W/W at 200K - a temperature attainable with a thermoelectric cooler.

Original language	English
Pages (from-to)	312-313
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	4
DOIs	https://doi.org/10.1049/el:20082782
State	Published - 2008
Externally published	Yes

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10.1049/el:20082782

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abstract = "A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06W/W at 200K - a temperature attainable with a thermoelectric cooler.",

author = "A. Boucherif and D. Ban and H. Luo and E. Dupont and Wasilewski, \{Z. R.\} and Liu, \{H. C.\} and Y. Paltiel and A. Raizman and A. Sher",

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AU - Boucherif, A.

AU - Ban, D.

AU - Luo, H.

AU - Dupont, E.

AU - Wasilewski, Z. R.

AU - Liu, H. C.

AU - Paltiel, Y.

AU - Raizman, A.

AU - Sher, A.

PY - 2008

Y1 - 2008

N2 - A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06W/W at 200K - a temperature attainable with a thermoelectric cooler.

AB - A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06W/W at 200K - a temperature attainable with a thermoelectric cooler.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

InAsSb based mid-infrared optical upconversion devices operable at thermoelectric temperatures

Abstract

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