InAsSb/GaSb heterostructure based mid-wavelength-infrared detector for high temperature operation

Y. Sharabani*, Y. Paltiel, A. Sher, A. Raizman, A. Zussman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The properties of a midinfrared photodetector, based on a lattice matched n-N In As0.91 Sb0.09 GaSb type-II heterostructure, were investigated. The relatively simple two layer structure shows very promising characteristics for sensitive and dual color infrared detection. I-V characteristics and spectral response were measured at the temperature range of 10-300 K. High zero-bias resistance area product R0 A of 2.5 cm2 was obtained at room temperature. The measured background limited infrared photodetection temperature was 180 K corresponding to 4.1 μm cutoff. Shot and Johnson noise limited detectivities corresponding to InAsSb absorption were measured to be 1.3× 1010 and 4.9× 109 cm Hz12 W-1 at 180 and 300 K, respectively. An enhanced optical response with gain larger than unity was observed below 120 K. Bias tunable dual color detection was demonstrated at all measured temperatures.

Original languageAmerican English
Article number232106
JournalApplied Physics Letters
Volume90
Issue number23
DOIs
StatePublished - 2007
Externally publishedYes

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