Inert two-dimensional accumulation layers at the free ZnO surface produced by hydrogen implantation

A. Many; Y. Goldstein; G. Yaron; J. Levy

doi:10.1016/0039-6028(86)90997-0

Inert two-dimensional accumulation layers at the free ZnO surface produced by hydrogen implantation

A. Many^*, Y. Goldstein, G. Yaron, J. Levy

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Low-energy hydrogen-ion implantation is use to produced extremely strong electron accumulation layers on ZnO. Such layers are 10-20 Å wide and resemble closely accumulation layers obtained by conventional methods. They are, however, completely insensitive to oxygen and thus constitute the only two-dimensional electron gas system on a surface that is both free and inert.

Original language	English
Pages (from-to)	416-421
Number of pages	6
Journal	Surface Science
Volume	170
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(86)90997-0
State	Published - 3 Apr 1986

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title = "Inert two-dimensional accumulation layers at the free ZnO surface produced by hydrogen implantation",

abstract = "Low-energy hydrogen-ion implantation is use to produced extremely strong electron accumulation layers on ZnO. Such layers are 10-20 {\AA} wide and resemble closely accumulation layers obtained by conventional methods. They are, however, completely insensitive to oxygen and thus constitute the only two-dimensional electron gas system on a surface that is both free and inert.",

author = "A. Many and Y. Goldstein and G. Yaron and J. Levy",

year = "1986",

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AU - Many, A.

AU - Goldstein, Y.

AU - Yaron, G.

AU - Levy, J.

PY - 1986/4/3

Y1 - 1986/4/3

N2 - Low-energy hydrogen-ion implantation is use to produced extremely strong electron accumulation layers on ZnO. Such layers are 10-20 Å wide and resemble closely accumulation layers obtained by conventional methods. They are, however, completely insensitive to oxygen and thus constitute the only two-dimensional electron gas system on a surface that is both free and inert.

AB - Low-energy hydrogen-ion implantation is use to produced extremely strong electron accumulation layers on ZnO. Such layers are 10-20 Å wide and resemble closely accumulation layers obtained by conventional methods. They are, however, completely insensitive to oxygen and thus constitute the only two-dimensional electron gas system on a surface that is both free and inert.

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JO - Surface Science

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Inert two-dimensional accumulation layers at the free ZnO surface produced by hydrogen implantation

Abstract

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