Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Y. Huang, S. Aharon, A. Rolland, L. Pedesseau, O. Durand, L. Etgar, J. Even*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

Original languageAmerican English
Article number85501
JournalEPJ Photovoltaics
Volume8
DOIs
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© Y. Huang et al.

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