Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Y. Huang; S. Aharon; A. Rolland; L. Pedesseau; O. Durand; L. Etgar; J. Even

doi:10.1051/epjpv/2017001

Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Y. Huang, S. Aharon, A. Rolland, L. Pedesseau, O. Durand, L. Etgar, J. Even^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

Original language	English
Article number	85501
Journal	EPJ Photovoltaics
Volume	8
DOIs	https://doi.org/10.1051/epjpv/2017001
State	Published - 2017

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Publisher Copyright:
© Y. Huang et al.

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abstract = "The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.",

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AU - Huang, Y.

AU - Aharon, S.

AU - Rolland, A.

AU - Pedesseau, L.

AU - Durand, O.

AU - Etgar, L.

AU - Even, J.

PY - 2017

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AB - The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

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Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

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