Influence of the electric field on the excitonic luminescence of epitaxial GaN films

D. K. Nelson; V. D. Kagan; E. V. Kalinina; M. A. Jacobson

doi:10.1016/S0022-2313(96)00338-9

Influence of the electric field on the excitonic luminescence of epitaxial GaN films

D. K. Nelson^*
, V. D. Kagan
, E. V. Kalinina
, M. A. Jacobson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Quenching and enhancement of exciton photoluminescence were observed when applying the external voltage to the Shottky barrier. The effect is explained taking into account the ionization of free excitons by the electric field and voltage induced variation of the barrier width. The value of ionization electric field for free exciton E₀ = 10⁵ V/cm is estimated.

Original language	English
Pages (from-to)	865-866
Number of pages	2
Journal	Journal of Luminescence
Volume	72-74
DOIs	https://doi.org/10.1016/S0022-2313(96)00338-9
State	Published - Jun 1997
Externally published	Yes

Keywords

Electric field effect
Excitons

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10.1016/S0022-2313(96)00338-9

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title = "Influence of the electric field on the excitonic luminescence of epitaxial GaN films",

abstract = "Quenching and enhancement of exciton photoluminescence were observed when applying the external voltage to the Shottky barrier. The effect is explained taking into account the ionization of free excitons by the electric field and voltage induced variation of the barrier width. The value of ionization electric field for free exciton E0 = 105 V/cm is estimated.",

keywords = "Electric field effect, Excitons",

author = "Nelson, \{D. K.\} and Kagan, \{V. D.\} and Kalinina, \{E. V.\} and Jacobson, \{M. A.\}",

year = "1997",

month = jun,

doi = "10.1016/S0022-2313(96)00338-9",

language = "אנגלית",

volume = "72-74",

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journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

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T1 - Influence of the electric field on the excitonic luminescence of epitaxial GaN films

AU - Nelson, D. K.

AU - Kagan, V. D.

AU - Kalinina, E. V.

AU - Jacobson, M. A.

PY - 1997/6

Y1 - 1997/6

N2 - Quenching and enhancement of exciton photoluminescence were observed when applying the external voltage to the Shottky barrier. The effect is explained taking into account the ionization of free excitons by the electric field and voltage induced variation of the barrier width. The value of ionization electric field for free exciton E0 = 105 V/cm is estimated.

AB - Quenching and enhancement of exciton photoluminescence were observed when applying the external voltage to the Shottky barrier. The effect is explained taking into account the ionization of free excitons by the electric field and voltage induced variation of the barrier width. The value of ionization electric field for free exciton E0 = 105 V/cm is estimated.

KW - Electric field effect

KW - Excitons

UR - https://www.scopus.com/pages/publications/0031168443

U2 - 10.1016/S0022-2313(96)00338-9

DO - 10.1016/S0022-2313(96)00338-9

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AN - SCOPUS:0031168443

SN - 0022-2313

VL - 72-74

SP - 865

EP - 866

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Influence of the electric field on the excitonic luminescence of epitaxial GaN films

Abstract

Keywords

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