TY - JOUR
T1 - Influence of the substrate temperature on the recombination processes in a-Si:H
AU - Lubianiker, Y.
AU - Balberg, I.
AU - Fonseca, L.
AU - Weisz, S. Z.
PY - 1997
Y1 - 1997
N2 - We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.
AB - We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.
UR - http://www.scopus.com/inward/record.url?scp=0031331497&partnerID=8YFLogxK
U2 - 10.1557/proc-467-209
DO - 10.1557/proc-467-209
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AN - SCOPUS:0031331497
SN - 0272-9172
VL - 467
SP - 209
EP - 214
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1997 MRS Spring Symposium
Y2 - 31 March 1997 through 4 April 1997
ER -