Influence of the substrate temperature on the recombination processes in a-Si:H

Y. Lubianiker*, I. Balberg, L. Fonseca, S. Z. Weisz

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.

Original languageEnglish
Pages (from-to)209-214
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume467
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 31 Mar 19974 Apr 1997

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