Influence of the substrate temperature on the recombination processes in a-Si:H

Y. Lubianiker; I. Balberg; L. Fonseca; S. Z. Weisz

doi:10.1557/proc-467-209

Influence of the substrate temperature on the recombination processes in a-Si:H

Y. Lubianiker^*
, I. Balberg
, L. Fonseca
, S. Z. Weisz

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how T_s determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.

Original language	English
Pages (from-to)	209-214
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	467
DOIs	https://doi.org/10.1557/proc-467-209
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 31 Mar 1997 → 4 Apr 1997

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1557/proc-467-209

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@article{161f64ae7bd2472796c0b0cc6b4c0b75,

title = "Influence of the substrate temperature on the recombination processes in a-Si:H",

abstract = "We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.",

author = "Y. Lubianiker and I. Balberg and L. Fonseca and Weisz, \{S. Z.\}",

year = "1997",

doi = "10.1557/proc-467-209",

language = "אנגלית",

volume = "467",

pages = "209--214",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Springer Nature",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

}

TY - JOUR

T1 - Influence of the substrate temperature on the recombination processes in a-Si:H

AU - Lubianiker, Y.

AU - Balberg, I.

AU - Fonseca, L.

AU - Weisz, S. Z.

PY - 1997

Y1 - 1997

N2 - We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.

AB - We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 - 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.

UR - https://www.scopus.com/pages/publications/0031331497

U2 - 10.1557/proc-467-209

DO - 10.1557/proc-467-209

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0031331497

SN - 0272-9172

VL - 467

SP - 209

EP - 214

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Influence of the substrate temperature on the recombination processes in a-Si:H

Abstract

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