InGaAs/GaAs 0.98-μm low-divergence central-lobe semiconductor lasers with δ-doped resonant tunneling quantum wells

Dan Fekete*, Itay Shomroni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-μm lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type δ-doping. Optimized coupling between the δ-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields Jth = 98 A/cm2 per QW, T0= 80 °C, and a far-field central lobe angle of ∼ 10°.

Original languageEnglish
Pages (from-to)700-710
Number of pages11
JournalIEEE Journal of Quantum Electronics
Volume45
Issue number6
DOIs
StatePublished - 2009
Externally publishedYes

Keywords

  • Doping profiles
  • High-power semiconductor lasers
  • IEEE
  • Indium alloys
  • Indium gallium arsenide
  • N-type δ-doping
  • Optical waveguides
  • Performance evaluation
  • Quantum-well (QW) lasers
  • Resonant tunneling devices
  • Strain
  • Waveguide lasers

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