InGaAs/GaAs 0.98-μm low-divergence central-lobe semiconductor lasers with δ-doped resonant tunneling quantum wells

Dan Fekete; Itay Shomroni

doi:10.1109/JQE.2009.2013145

InGaAs/GaAs 0.98-μm low-divergence central-lobe semiconductor lasers with δ-doped resonant tunneling quantum wells

Dan Fekete^*, Itay Shomroni

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-μm lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type δ-doping. Optimized coupling between the δ-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields J_th = 98 A/cm² per QW, T₀= 80 °C, and a far-field central lobe angle of ∼ 10°.

Original language	English
Pages (from-to)	700-710
Number of pages	11
Journal	IEEE Journal of Quantum Electronics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/JQE.2009.2013145
State	Published - 2009
Externally published	Yes

Keywords

Doping profiles
High-power semiconductor lasers
IEEE
Indium alloys
Indium gallium arsenide
N-type δ-doping
Optical waveguides
Performance evaluation
Quantum-well (QW) lasers
Resonant tunneling devices
Strain
Waveguide lasers

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10.1109/JQE.2009.2013145

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title = "InGaAs/GaAs 0.98-μm low-divergence central-lobe semiconductor lasers with δ-doped resonant tunneling quantum wells",

abstract = "In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-μm lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type δ-doping. Optimized coupling between the δ-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields Jth = 98 A/cm2 per QW, T0= 80 °C, and a far-field central lobe angle of ∼ 10°.",

keywords = "Doping profiles, High-power semiconductor lasers, IEEE, Indium alloys, Indium gallium arsenide, N-type δ-doping, Optical waveguides, Performance evaluation, Quantum-well (QW) lasers, Resonant tunneling devices, Strain, Waveguide lasers",

author = "Dan Fekete and Itay Shomroni",

year = "2009",

doi = "10.1109/JQE.2009.2013145",

language = "אנגלית",

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pages = "700--710",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Fekete, Dan

AU - Shomroni, Itay

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AB - In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-μm lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type δ-doping. Optimized coupling between the δ-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields Jth = 98 A/cm2 per QW, T0= 80 °C, and a far-field central lobe angle of ∼ 10°.

KW - Doping profiles

KW - High-power semiconductor lasers

KW - IEEE

KW - Indium alloys

KW - Indium gallium arsenide

KW - N-type δ-doping

KW - Optical waveguides

KW - Performance evaluation

KW - Quantum-well (QW) lasers

KW - Resonant tunneling devices

KW - Strain

KW - Waveguide lasers

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JF - IEEE Journal of Quantum Electronics

IS - 6

ER -

InGaAs/GaAs 0.98-μm low-divergence central-lobe semiconductor lasers with δ-doped resonant tunneling quantum wells

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