Abstract
In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-μm lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type δ-doping. Optimized coupling between the δ-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields Jth = 98 A/cm2 per QW, T0= 80 °C, and a far-field central lobe angle of ∼ 10°.
Original language | American English |
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Pages (from-to) | 700-710 |
Number of pages | 11 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 45 |
Issue number | 6 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |
Keywords
- Doping profiles
- High-power semiconductor lasers
- IEEE
- Indium alloys
- Indium gallium arsenide
- N-type δ-doping
- Optical waveguides
- Performance evaluation
- Quantum-well (QW) lasers
- Resonant tunneling devices
- Strain
- Waveguide lasers