InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

Y. Uliel*, D. Cohen-Elias, N. Sicron, I. Grimberg, N. Snapi, Y. Paltiel, M. Katz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7–2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 µm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 µm in mesa devices. D was 1.7×1010cm·Hz/W at 2 μm.

Original languageAmerican English
Pages (from-to)63-71
Number of pages9
JournalInfrared Physics and Technology
Volume84
DOIs
StatePublished - Aug 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

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