Inhomogeneity in the network order of device quality a-Si:H

G. Morell*, R. S. Katiyar, S. Z. Weisz, M. Gomez, I. Balberg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Pages321-326
Number of pages6
ISBN (Print)155899193X, 9781558991934
DOIs
StatePublished - 1993
Externally publishedYes
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: 13 Apr 199316 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume297
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period13/04/9316/04/93

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