Inhomogeneity in the network order of device quality a-Si:H

G. Morell; R. S. Katiyar; S. Z. Weisz; M. Gomez; I. Balberg

doi:10.1557/proc-297-321

Inhomogeneity in the network order of device quality a-Si:H

G. Morell^*
, R. S. Katiyar
, S. Z. Weisz
, M. Gomez
, I. Balberg

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.

Original language	English
Title of host publication	Amorphous Silicon Technology
Publisher	Publ by Materials Research Society
Pages	321-326
Number of pages	6
ISBN (Print)	155899193X, 9781558991934
DOIs	https://doi.org/10.1557/proc-297-321
State	Published - 1993
Externally published	Yes
Event	Proceedings of the MRS Spring Meeting - San Francisco, CA, USA Duration: 13 Apr 1993 → 16 Apr 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	297
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the MRS Spring Meeting
City	San Francisco, CA, USA
Period	13/04/93 → 16/04/93

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1557/proc-297-321

Cite this

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title = "Inhomogeneity in the network order of device quality a-Si:H",

abstract = "In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.",

author = "G. Morell and Katiyar, \{R. S.\} and Weisz, \{S. Z.\} and M. Gomez and I. Balberg",

year = "1993",

doi = "10.1557/proc-297-321",

language = "אנגלית",

isbn = "155899193X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "321--326",

booktitle = "Amorphous Silicon Technology",

note = "Proceedings of the MRS Spring Meeting ; Conference date: 13-04-1993 Through 16-04-1993",

}

Morell, G, Katiyar, RS, Weisz, SZ, Gomez, M & Balberg, I 1993, Inhomogeneity in the network order of device quality a-Si:H. in Amorphous Silicon Technology. Materials Research Society Symposium Proceedings, vol. 297, Publ by Materials Research Society, pp. 321-326, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 13/04/93. https://doi.org/10.1557/proc-297-321

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AU - Morell, G.

AU - Katiyar, R. S.

AU - Weisz, S. Z.

AU - Gomez, M.

AU - Balberg, I.

PY - 1993

Y1 - 1993

N2 - In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.

AB - In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.

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T2 - Proceedings of the MRS Spring Meeting

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ER -

Inhomogeneity in the network order of device quality a-Si:H

Abstract

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Conference

UN SDGs

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