Interface modifications of InAs quantum-dots solids and their effects on FET performance

Michal Soreni-Harari, David Mocatta, Marina Zimin, Yair Gannot, Uri Banin, Nir Tessler*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

InAs nanocrystals field-effect transistors with an ON/OFF ratio of 10 5 are reported. By tailoring the interface regions in the active layer step-by-step, the evolution of the ON/OFF ratio can be followed from approximately 5 all the way to around 105. The formation of a semiconducting solid from colloidal nanocrystals is achieved through targeted design of the nanocrystalnanocrystal interaction. The manipulation characteristics of the nanocrystal interfaces include the matrix surrounding the inorpnic core, the interparticle distance, and the order of nanocrystals in the 3D array. Through careful analysis of device characteristics following each treatment, the effect of each on the physical properties of the films are able to be verified. The enhanced performance is related to interparticle spacing, reduction in sub-gap states, and better electronic order (lower a parameter). Films with enhanced charge transport qualities retain their quantum-confined characteristics throughout the procedure, thus making them useful for optoelectronic applications.

Original languageAmerican English
Pages (from-to)1005-1010
Number of pages6
JournalAdvanced Functional Materials
Volume20
Issue number6
DOIs
StatePublished - 24 Mar 2010

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