Interrelation between light emitting and structural properties of Si nanoclusters embedded in SiO2 and Al2O3 hosts

L. Khomenkova; O. Kolomys; V. Strelchuk; A. Kuchuk; V. Kladko; M. Baran; J. Jedrzejewski; I. Balberg; P. Marie; F. Gourbilleau; N. Korsunska

doi:10.1557/opl.2013.1167

Interrelation between light emitting and structural properties of Si nanoclusters embedded in SiO₂ and Al₂O₃ hosts

L. Khomenkova
, O. Kolomys
, V. Strelchuk
, A. Kuchuk
, V. Kladko
, M. Baran
, J. Jedrzejewski
, I. Balberg
, P. Marie
, F. Gourbilleau
, N. Korsunska

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The present work deals with the comparative investigation of Si-ncs embedded in SiO₂ and Al₂O₃ dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Si_x(SiO₂)_1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Si_x(Al₂O₃)_1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Si _x(SiO₂)_1-x films is exciton recombination in Si-ncs, while in Si_x(Al₂O₃)_1-x films the recombination via defects prevails due to higher amount of interface defects in the Si_x(Al₂O₃)_1-x caused by stresses.

Original language	English
Pages (from-to)	75-80
Number of pages	6
Journal	MRS Advances
Volume	1617
DOIs	https://doi.org/10.1557/opl.2013.1167
State	Published - 2013
Event	22nd International Materials Research Congress, IMRC 2013 - Cancun, Mexico Duration: 11 Aug 2013 → 15 Aug 2013

Keywords

Al2O3 films
Si nanocrystals
luminescence

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10.1557/opl.2013.1167

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title = "Interrelation between light emitting and structural properties of Si nanoclusters embedded in SiO2 and Al2O3 hosts",

abstract = "The present work deals with the comparative investigation of Si-ncs embedded in SiO2 and Al2O3 dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Six(SiO2)1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Six(Al2O3)1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Si x(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3)1-x films the recombination via defects prevails due to higher amount of interface defects in the Six(Al2O3)1-x caused by stresses.",

keywords = "Al2O3 films, Si nanocrystals, luminescence",

author = "L. Khomenkova and O. Kolomys and V. Strelchuk and A. Kuchuk and V. Kladko and M. Baran and J. Jedrzejewski and I. Balberg and P. Marie and F. Gourbilleau and N. Korsunska",

year = "2013",

doi = "10.1557/opl.2013.1167",

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volume = "1617",

pages = "75--80",

journal = "MRS Advances",

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note = "22nd International Materials Research Congress, IMRC 2013 ; Conference date: 11-08-2013 Through 15-08-2013",

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TY - JOUR

T1 - Interrelation between light emitting and structural properties of Si nanoclusters embedded in SiO2 and Al2O3 hosts

AU - Khomenkova, L.

AU - Kolomys, O.

AU - Strelchuk, V.

AU - Kuchuk, A.

AU - Kladko, V.

AU - Baran, M.

AU - Jedrzejewski, J.

AU - Balberg, I.

AU - Marie, P.

AU - Gourbilleau, F.

AU - Korsunska, N.

PY - 2013

Y1 - 2013

N2 - The present work deals with the comparative investigation of Si-ncs embedded in SiO2 and Al2O3 dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Six(SiO2)1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Six(Al2O3)1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Si x(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3)1-x films the recombination via defects prevails due to higher amount of interface defects in the Six(Al2O3)1-x caused by stresses.

AB - The present work deals with the comparative investigation of Si-ncs embedded in SiO2 and Al2O3 dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Six(SiO2)1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Six(Al2O3)1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Si x(SiO2)1-x films is exciton recombination in Si-ncs, while in Six(Al2O3)1-x films the recombination via defects prevails due to higher amount of interface defects in the Six(Al2O3)1-x caused by stresses.

KW - Al2O3 films

KW - Si nanocrystals

KW - luminescence

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JF - MRS Advances

T2 - 22nd International Materials Research Congress, IMRC 2013

Y2 - 11 August 2013 through 15 August 2013

ER -

Interrelation between light emitting and structural properties of Si nanoclusters embedded in SiO₂ and Al₂O₃ hosts

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Keywords

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