TY - JOUR
T1 - Investigation of aging process of Si-Si Ox structures with silicon quantum dots
AU - Baran, M.
AU - Khomenkova, L.
AU - Korsunska, N.
AU - Stara, T.
AU - Sheinkman, M.
AU - Goldstein, Y.
AU - Jedrzejewski, J.
AU - Savir, E.
PY - 2005
Y1 - 2005
N2 - In this work the aging processes of magnetron-sputtered Si-Si Ox structures with silicon quantum dots are investigated by photoluminescence, electronic paramagnetic resonance, infrared absorption, and Raman-scattering methods. It is observed that oxidation of the silicon dots, change in the defect concentration in the oxide matrix, and oxidation of the silicon amorphous phase occur during storage in air at room temperature. A comparison of the variation of parameters of sputtered structures and porous silicon layers caused by the aging process is made. It is shown that the rate of oxidation of silicon dots and the decrease of their sizes in sputtered structures are essentially less than that in porous silicon. It is also shown that in Si-Si Ox, layers in contrast to porous silicon, the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging.
AB - In this work the aging processes of magnetron-sputtered Si-Si Ox structures with silicon quantum dots are investigated by photoluminescence, electronic paramagnetic resonance, infrared absorption, and Raman-scattering methods. It is observed that oxidation of the silicon dots, change in the defect concentration in the oxide matrix, and oxidation of the silicon amorphous phase occur during storage in air at room temperature. A comparison of the variation of parameters of sputtered structures and porous silicon layers caused by the aging process is made. It is shown that the rate of oxidation of silicon dots and the decrease of their sizes in sputtered structures are essentially less than that in porous silicon. It is also shown that in Si-Si Ox, layers in contrast to porous silicon, the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging.
UR - http://www.scopus.com/inward/record.url?scp=29144501246&partnerID=8YFLogxK
U2 - 10.1063/1.2134887
DO - 10.1063/1.2134887
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AN - SCOPUS:29144501246
SN - 0021-8979
VL - 98
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
M1 - 113515
ER -