Investigation of MOS Capacitors with Thin ZrO2 Layers and Various Gate Materials for Advanced DRAM Applications

Joseph Shappir, Ayal Anis, Ida Pinsky

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

Thin ZrO2 layers were used to realize MOS capacitors with aluminum, polysilicon, and molybdenum gate electrodes. The layers, 300–600 A in thickness, were obtained by metal organic chemical vapor deposition. The effects of various high-temperature treatments as well as gate material deposition conditions on the MOS capacitor properties were studied. Processing conditions compatible with standard silicon technology were established to obtain capacitors suitable for advanced DRAM application. Relative dielectric constant e ≥ 16, breakdown field EB≥ 3 MV/cm, and leakage currents at applied voltage of 5 V around 10-8 A/cm2 enable the realization of capacitors with dielectric layer equivalent to 35 A of SiO2.

Original languageEnglish
Pages (from-to)442-449
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume33
Issue number4
DOIs
StatePublished - Apr 1986

Fingerprint

Dive into the research topics of 'Investigation of MOS Capacitors with Thin ZrO2 Layers and Various Gate Materials for Advanced DRAM Applications'. Together they form a unique fingerprint.

Cite this