Investigation of the fermi surface of V3Si by means of positron annihilation

S. Berko; M. Weger

doi:10.1103/PhysRevLett.24.55

Investigation of the fermi surface of V3Si by means of positron annihilation

S. Berko^*, M. Weger

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Measurements of the angular correlation of annihilation radiation from oriented single crystals of V3Si are reported, exhibiting marked anisotropies. These anisotropies are interpreted as hole pockets in the Fermi surface and are compared with the predictions of the linear chain model.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Physical Review Letters
Volume	24
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.24.55
State	Published - 1970

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10.1103/PhysRevLett.24.55

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abstract = "Measurements of the angular correlation of annihilation radiation from oriented single crystals of V3Si are reported, exhibiting marked anisotropies. These anisotropies are interpreted as hole pockets in the Fermi surface and are compared with the predictions of the linear chain model.",

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Investigation of the fermi surface of V3Si by means of positron annihilation

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