Investigation of the holographic storage capacity of paraelectric K1-XLiXTa1-yNbyO3:Cu,V

Benny Pesach*, Eli Refaeli, Aharon J. Agranat

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

High holographic storage capacity of paraelectric K1-xLixTa1-yNbyO3:Cu,V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.

Original languageAmerican English
Pages (from-to)642-644
Number of pages3
JournalOptics Letters
Volume23
Issue number8
DOIs
StatePublished - 15 Apr 1998

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