Investigation of the holographic storage capacity of paraelectric K1-XLiXTa1-yNbyO3:Cu,V

Benny Pesach; Eli Refaeli; Aharon J. Agranat

doi:10.1364/OL.23.000642

Investigation of the holographic storage capacity of paraelectric K_1-XLi_XTa_1-yNb_yO₃:Cu,V

Benny Pesach^*
, Eli Refaeli
, Aharon J. Agranat

^*Corresponding author for this work

The Institute of Applied Physics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

High holographic storage capacity of paraelectric K_1-xLi_xTa_1-yNb_yO₃:Cu,V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.

Original language	English
Pages (from-to)	642-644
Number of pages	3
Journal	Optics Letters
Volume	23
Issue number	8
DOIs	https://doi.org/10.1364/OL.23.000642
State	Published - 15 Apr 1998

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10.1364/OL.23.000642

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title = "Investigation of the holographic storage capacity of paraelectric K1-XLiXTa1-yNbyO3:Cu,V",

abstract = "High holographic storage capacity of paraelectric K1-xLixTa1-yNbyO3:Cu,V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/\# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/\# of 20.",

author = "Benny Pesach and Eli Refaeli and Agranat, \{Aharon J.\}",

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AU - Agranat, Aharon J.

PY - 1998/4/15

Y1 - 1998/4/15

N2 - High holographic storage capacity of paraelectric K1-xLixTa1-yNbyO3:Cu,V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.

AB - High holographic storage capacity of paraelectric K1-xLixTa1-yNbyO3:Cu,V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.

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Investigation of the holographic storage capacity of paraelectric K_1-XLi_XTa_1-yNb_yO₃:Cu,V

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