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Ir
6
In
32
S
21
, a polar, metal-rich semiconducting subchalcogenide
Jason F. Khoury
, Jiangang He
, Jonathan E. Pfluger
,
Ido Hadar
, Mahalingam Balasubramanian
, Constantinos C. Stoumpos
, Rui Zu
, Venkatraman Gopalan
, Chris Wolverton
, Mercouri G. Kanatzidis
*
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
9
Scopus citations
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6
In
32
S
21
, a polar, metal-rich semiconducting subchalcogenide'. Together they form a unique fingerprint.
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Keyphrases
Semiconductors
100%
Valence Band Maximum
100%
Semiconducting Behavior
100%
Metal-rich
100%
Polar Metal
100%
DFT Calculations
50%
Electronic Structure
50%
Electronic Structure Calculations
50%
Oxidation State
50%
Absorption Edge
50%
X-ray Absorption Spectroscopy
50%
Chemical Bonding
50%
Electron Transfer
50%
Unit Cell Parameters
50%
Fermi Level
50%
Electron Localization Function
50%
Large Band Gap
50%
Photoemission
50%
Spectroscopic Data
50%
Photoresponse
50%
White Light
50%
Kelvin Probe Method
50%
Intermetallics
50%
Direct Band Gap
50%
Hole Effective Mass
50%
Metal Chalcogenides
50%
Electron Mass
50%
Conduction Band Minimum
50%
New Structure Type
50%
Coordination Environment
50%
Chemistry
Electronic State
100%
Band Gap
100%
Valence Band
100%
Crystal Structure
50%
Space Group
50%
Kelvin Probe
50%
Unit Cell Parameter
50%
Fermi Level
50%
X Ray Absorption Spectroscopy
50%
Electron Localization
50%
Photoemission
50%
Substance Spectroscopy
50%
Conduction Band
50%
P31m
50%
Density Functional Theory
50%
Electron Transfer
50%
Intermetallic Compound
50%
Material Science
Electronic Structure Calculation
100%
X-Ray Absorption Spectroscopy
100%
Electron Transfer
100%
Chemical Bonding
100%
Metal Chalcogenides
100%
Crystal Structure
100%
Intermetallics
100%