IVB-3 Dynamic Trapping-Detrapping Phenomena in Thermal SiO2

IVB-3 Dynamic Trapping-Detrapping Phenomena in Thermal SiO₂

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2542-2543
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1985.22347
State	Published - Nov 1985

@article{78d24ade51ac46179bb133236a3b370d,

title = "IVB-3 Dynamic Trapping-Detrapping Phenomena in Thermal SiO2",

author = "Y. Nissan-Cohen and J. Shappir and D. Frohman-Bentchkowsky",

year = "1985",

month = nov,

doi = "10.1109/T-ED.1985.22347",

language = "אנגלית",

volume = "32",

pages = "2542--2543",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "11",

}

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T1 - IVB-3 Dynamic Trapping-Detrapping Phenomena in Thermal SiO2

AU - Nissan-Cohen, Y.

AU - Shappir, J.

AU - Frohman-Bentchkowsky, D.

PY - 1985/11

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UR - https://www.scopus.com/pages/publications/0022153706

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SN - 0018-9383

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EP - 2543

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -