Abstract
Crystallization velocities in several face-centered-cubic (fcc) and body-centered-cubic (bcc) metals are calculated using molecular dynamics computer simulations for the (1 0 0) and densely packed (1 1 1) or (1 1 0) planar interfaces. We show that the crystallization kinetics can be divided into high- and low-temperature regimes, separated at a crossover temperature, Tc, which is associated with kinetic arrest. In the high-temperature regime, the velocity in both fcc and bcc metals initially increases with the degree of undercooling before reaching a maximum somewhat above the glass temperature. The kinetics is characterized by a thermally activated process. In the low-temperature regime, stresses develop in the interface and reduce the apparent activation energies for interface mobility. For the fcc metals (Cu, Ni, Ag and Pt) the activation energies fall essentially to zero, indicating an athermal process. For bcc metals (Fe, Mo, V, Ta) the activation energies remain finite, varying from ≈0.013 eV (Ta) to ≈0.2 eV (Mo).
Original language | English |
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Pages (from-to) | 524-530 |
Number of pages | 7 |
Journal | Acta Materialia |
Volume | 58 |
Issue number | 2 |
DOIs | |
State | Published - Jan 2010 |
Bibliographical note
Funding Information:We acknowledge the support from US Department of Energy – National Nuclear Security Administration under Grant No. DEFG03-02NA00070, and the US DOE – Basic Energy Science under Grant No. DEFG02-05ER46217.
Keywords
- Crystallization
- Interface dynamics
- Kinetics
- Metals
- Molecular dynamics