Abstract
Graphene oxide (GO) is deposited onto the Al2O3 gates of field-effect transistor devices to yield a functional matrix for the sensing of thrombin or Hg2+ ions. The deposition of an aptamer subunit against thrombin or a tailored nucleic acid with appropriate T mismatches on the GO, yield active surfaces for the analysis of thrombin or Hg2+ ions. The desorption of the aptamer-subunit from GO, through the formation of the aptamer-thrombin complex, or the desorption of the T-Hg2+-T-bridged duplex DNA alter the gate potential, thus providing a signal for the sensing events.
Original language | English |
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Pages (from-to) | 851-856 |
Number of pages | 6 |
Journal | Electroanalysis |
Volume | 25 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2013 |
Keywords
- Aptamer
- DNA
- Field-effect transistors
- Graphene oxide
- Sensors