TY - JOUR
T1 - Light intensity exponents ns sensitive tools for the detection of impurities in a-si:h
AU - Fonseca, L. F.
AU - Weisz, S. Z.
AU - Alpuim, P.
AU - Chu, V.
AU - Conde, J. P.
AU - Naides, R.
AU - Balberg, I.
PY - 2000
Y1 - 2000
N2 - We have shown recently that the temperature dependence of the phototransport properties can yield information regarding the state distribution in the forbidden gap of semiconductors. Of these properties the light intensity exponents of both, the majority carriers, γe, and the minority carriers, γh were found to be very sensitive to the details of this distribution. In particular, noting that sub 1/2 values of the exponents are very unusual we have studied their origin in some a-Si:H materials. Finding experimentally such sub 1/2 values of γh and running computer simulations of the recombination processes in a-Si:H led us to the conclusion that these low values are due to acceptor-like centers which have a relatively high capture coefficient for the holes. We attribute these centers to the unintentional oxygen doping in a-Si:H. We will show that the oxygen presence, usually ignored in the discussions of the phototransport properties of a-Si:H, appears to be, in many cases, the dominant factor in the properties of "intrinsic" a-Si:H.
AB - We have shown recently that the temperature dependence of the phototransport properties can yield information regarding the state distribution in the forbidden gap of semiconductors. Of these properties the light intensity exponents of both, the majority carriers, γe, and the minority carriers, γh were found to be very sensitive to the details of this distribution. In particular, noting that sub 1/2 values of the exponents are very unusual we have studied their origin in some a-Si:H materials. Finding experimentally such sub 1/2 values of γh and running computer simulations of the recombination processes in a-Si:H led us to the conclusion that these low values are due to acceptor-like centers which have a relatively high capture coefficient for the holes. We attribute these centers to the unintentional oxygen doping in a-Si:H. We will show that the oxygen presence, usually ignored in the discussions of the phototransport properties of a-Si:H, appears to be, in many cases, the dominant factor in the properties of "intrinsic" a-Si:H.
UR - http://www.scopus.com/inward/record.url?scp=0034431264&partnerID=8YFLogxK
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AN - SCOPUS:0034431264
SN - 0272-9172
VL - 609
SP - A2751-A2756
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
ER -