TY - JOUR
T1 - Linear and Nonlinear Properties of a Compact High-Kinetic-Inductance WSi Multimode Resonator
AU - Kirsh, Naftali
AU - Svetitsky, Elisha
AU - Goldstein, Samuel
AU - Pardo, Guy
AU - Hachmo, Ori
AU - Katz, Nadav
N1 - Publisher Copyright:
© 2021 American Physical Society.
PY - 2021/10
Y1 - 2021/10
N2 - The kinetic inductance (KI) of superconducting devices can be exploited for reducing the footprint of linear elements as well as for introducing nonlinearity to the circuit. We characterize the linear and nonlinear properties of a multimode resonator fabricated from amorphous tungsten silicide (WSi), with a fundamental frequency of f1=172 MHz. We show how the multimode structure of the device can be used to extract the different quality factors and to aid the nonlinear characterization. In the linear regime, the footprint is reduced by a factor of approximately 2.9 with standard lateral dimensions, with no significant degradation of the internal quality factor compared to a similar Al device. In the nonlinear regime, we observe self-positive frequency shifts at low powers, which can be attributed to saturation of tunneling two-level systems. The cross-mode nonlinearities are described well by a Kerr model with a self-Kerr coefficient on the order of |K11|/2π≈1.5×10-7 Hz per photon. These properties, together with a reproducible fabrication process, make WSi a promising candidate for creating linear and nonlinear circuit quantum electrodynamics elements.
AB - The kinetic inductance (KI) of superconducting devices can be exploited for reducing the footprint of linear elements as well as for introducing nonlinearity to the circuit. We characterize the linear and nonlinear properties of a multimode resonator fabricated from amorphous tungsten silicide (WSi), with a fundamental frequency of f1=172 MHz. We show how the multimode structure of the device can be used to extract the different quality factors and to aid the nonlinear characterization. In the linear regime, the footprint is reduced by a factor of approximately 2.9 with standard lateral dimensions, with no significant degradation of the internal quality factor compared to a similar Al device. In the nonlinear regime, we observe self-positive frequency shifts at low powers, which can be attributed to saturation of tunneling two-level systems. The cross-mode nonlinearities are described well by a Kerr model with a self-Kerr coefficient on the order of |K11|/2π≈1.5×10-7 Hz per photon. These properties, together with a reproducible fabrication process, make WSi a promising candidate for creating linear and nonlinear circuit quantum electrodynamics elements.
UR - http://www.scopus.com/inward/record.url?scp=85117168371&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.16.044017
DO - 10.1103/PhysRevApplied.16.044017
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AN - SCOPUS:85117168371
SN - 2331-7019
VL - 16
JO - Physical Review Applied
JF - Physical Review Applied
IS - 4
M1 - 044017
ER -