Tunneling spectroscopy of epitaxial (110) (formula presented) films reveals a doping-dependent transition from a pure (formula presented) to (formula presented) or (formula presented) order parameter. The subdominant (formula presented) or (formula presented) component manifests itself in a splitting of the zero-bias conductance peak and the appearance of subgap structures. The splitting is seen in the overdoped samples, increases systematically with doping, and is found to be an inherent property of the overdoped films. It was observed in both local tunnel junctions, using scanning tunneling microscopy (STM), and in macroscopic planar junctions, for films prepared by either sputtering or laser ablation. The STM measurements exhibit a fairly uniform splitting size in  oriented areas on the order of (formula presented) but vary from area to area, indicating some doping inhomogeneity. U- and V-shaped gaps were also observed, with good correspondence to the local faceting, a manifestation of the dominant d-wave order parameter.
|Original language||American English|
|Number of pages||7|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 2002|