Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

Ilya Goykhman, Boris Desiatov, Jacob Khurgin, Joseph Shappir, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

294 Scopus citations

Abstract

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

Original languageAmerican English
Pages (from-to)2219-2224
Number of pages6
JournalNano Letters
Volume11
Issue number6
DOIs
StatePublished - 8 Jun 2011

Keywords

  • Local-oxidation
  • Schottky-detector
  • internal photoemission
  • silicon-photonics
  • surface-plasmons

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