Long-Time-Scale Magnetization Ordering Induced by an Adsorbed Chiral Monolayer on Ferromagnets

I. Meirzada, N. Sukenik, G. Haim, S. Yochelis, L. T. Baczewski, Y. Paltiel*, N. Bar-Gill

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

When an electron passes through a chiral molecule, there is a high probability for correlation between the momentum and spin of the charge, thus leading to a spin polarized current. This phenomenon is known as the chiral-induced spin selectivity (CISS) effect. One of the most surprising experimental results recently demonstrated is that magnetization reversal in a ferromagnet with perpendicular anisotropy can be realized solely by chemisorbing a chiral molecular monolayer without applying any current or external magnetic field. This result raises the currently open question of whether this effect is due to the bonding event, held by the ferromagnet, or a long-time-scale effect stabilized by exchange interactions. In this work we have performed vectorial magnetic field measurements of the magnetization reorientation of a ferromagnetic layer exhibiting perpendicular anisotropy due to CISS using nitrogen-vacancy centers in diamond and followed the time dynamics of this effect. In parallel, we have measured the molecular monolayer tilt angle in order to find a correlation between the time dependence of the magnetization reorientation and the change of the tilt angle of the molecular monolayer. We have identified that changes in the magnetization direction correspond to changes of the molecular monolayer tilt angle, providing evidence for a long-time-scale characteristic of the induced magnetization reorientation. This suggests that the CISS effect has an effect over long time scales which we attribute to exchange interactions. These results offer significant insights into the fundamental processes underlying the CISS effect, contributing to the implementation of CISS in state-of-the-art applications such as spintronic and magnetic memory devices.

Original languageAmerican English
Pages (from-to)5574-5579
Number of pages6
JournalACS Nano
Volume15
Issue number3
DOIs
StatePublished - 23 Mar 2021

Bibliographical note

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Keywords

  • CISS effect
  • NV centers
  • ferromagnetic thin films
  • quantum magnetometry
  • self-assembled monolayer

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