Low-energy Compton scattering in materials

Rouven Essig, Yonit Hochberg, Yutaro Shoji, Aman Singal, Gregory Suczewski

Research output: Contribution to journalArticlepeer-review

Abstract

Low-energy Compton scattering is an important background for sub-GeV dark matter direct-detection and other experiments. Current Compton scattering calculations typically rely on assumptions that are not valid in the low-energy region of interest, beneath ∼50 eV. Here we relate the low-energy Compton scattering differential cross section to the dielectric response of the material. Our new approach can be used for a wide range of materials and includes all-electron, band-structure, and collective effects, which can be particularly relevant at low energies. We demonstrate the strength of our approach in several solid-state systems, in particular, Si, Ge, GaAs, and SiC, which are relevant for current and proposed experiments searching for dark matter, neutrinos, and millicharged particles.

Original languageEnglish
Article number116011
JournalPhysical Review D
Volume109
Issue number11
DOIs
StatePublished - 1 Jun 2024

Bibliographical note

Publisher Copyright:
© 2024 authors. Published by the American Physical Society.

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