Low-energy hydrogen-ion implantation in zinc oxide

G. Yaron, Y. Goldstein, A. Many

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Scopus citations

Abstract

Low-energy hydrogen-ion implantation on ZnO surfaces is reviewed. Some of the implanted hydrogen species (probably protons) act as electron donors. They penetrate 10 - 20 A below the surface, in agreement with theoretical predictions, giving rise to a free-electron accumulation layer of comparable width. At low temperatures, such a layer can be further enhanced by visible-light illumination, resulting in the strongest quantum well ever achieved on any semiconductor surface. Thermal pre-treatment of the surface increases the penetration depth to thousands of Angstroms.

Original languageEnglish
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages429-456
Number of pages28
DOIs
StatePublished - 1988

Publication series

NameSolid State Phenomena
Volume1-2
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Bibliographical note

Publisher Copyright:
© 1988 Trans Tech Publications, Switzerland.

Fingerprint

Dive into the research topics of 'Low-energy hydrogen-ion implantation in zinc oxide'. Together they form a unique fingerprint.

Cite this