Abstract
Low-energy hydrogen-ion implantation on ZnO surfaces is reviewed. Some of the implanted hydrogen species (probably protons) act as electron donors. They penetrate 10 - 20 A below the surface, in agreement with theoretical predictions, giving rise to a free-electron accumulation layer of comparable width. At low temperatures, such a layer can be further enhanced by visible-light illumination, resulting in the strongest quantum well ever achieved on any semiconductor surface. Thermal pre-treatment of the surface increases the penetration depth to thousands of Angstroms.
Original language | English |
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Title of host publication | Solid State Phenomena |
Publisher | Trans Tech Publications Ltd |
Pages | 429-456 |
Number of pages | 28 |
DOIs | |
State | Published - 1988 |
Publication series
Name | Solid State Phenomena |
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Volume | 1-2 |
ISSN (Print) | 1012-0394 |
ISSN (Electronic) | 1662-9779 |
Bibliographical note
Publisher Copyright:© 1988 Trans Tech Publications, Switzerland.