We present a new electro-optics data storage device based on the combination of negative differential resistances and optical cavity, remarkable for its simplicity and its complete CMOS compatibility with power consumption around the nanoWatt.
|Original language||American English|
|Title of host publication||CLEO|
|Subtitle of host publication||Science and Innovations, CLEO_SI 2020|
|Publisher||Optica Publishing Group (formerly OSA)|
|State||Published - 2020|
|Event||CLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States|
Duration: 10 May 2020 → 15 May 2020
|Name||Optics InfoBase Conference Papers|
|Volume||Part F183-CLEO-SI 2020|
|Conference||CLEO: Science and Innovations, CLEO_SI 2020|
|Period||10/05/20 → 15/05/20|
Bibliographical noteFunding Information:
Finally, we aim to use this bi-stable electro-optical device to create an SRAM memory cell. To demonstrate such operation, we have generated such a cell by simply connecting a bit line between the resistor and the device as depicted in Fig.2.e-g. We applied a writing voltage Vw (Fig.2.e) to bring the device in proximity to one of the stable solutions. When we opened the switch connecting the bit line to the device, Vs, it returned to its stable solution. The two optical levels of transmission corresponding to the two solutions are depicted in Fig.2.f as we turn on and off the switch, Vs c.f Fig.2.g. Further details of the device operating mode and results characterization will be reported in the talk. We acknowledge financial support from the Petacloud consortium of the Israeli innovation authority. R.G. acknowledges financial support from the Shulamit Aloni fellowship of the Israeli ministry of science.
© OSA 2020 © 2020 The Author(s)