Low power electro-optic SRAM based on negative differential resistance

Rivka Gherabli; Roy Zektzer; Meir Grajower; Joseph Shappir; Menachem Wofsy; Naor Inbar; Uriel Levy

doi:10.1364/CLEO_SI.2020.SM2J.6

Low power electro-optic SRAM based on negative differential resistance

Rivka Gherabli, Roy Zektzer, Meir Grajower, Joseph Shappir, Menachem Wofsy, Naor Inbar, Uriel Levy^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a new electro-optics data storage device based on the combination of negative differential resistances and optical cavity, remarkable for its simplicity and its complete CMOS compatibility with power consumption around the nanoWatt.

Original language	American English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2020
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_SI.2020.SM2J.6
State	Published - 2020
Event	CLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States Duration: 10 May 2020 → 15 May 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F183-CLEO-SI 2020
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2020
Country/Territory	United States
City	Washington
Period	10/05/20 → 15/05/20

Bibliographical note

Funding Information:
Finally, we aim to use this bi-stable electro-optical device to create an SRAM memory cell. To demonstrate such operation, we have generated such a cell by simply connecting a bit line between the resistor and the device as depicted in Fig.2.e-g. We applied a writing voltage Vw (Fig.2.e) to bring the device in proximity to one of the stable solutions. When we opened the switch connecting the bit line to the device, Vs, it returned to its stable solution. The two optical levels of transmission corresponding to the two solutions are depicted in Fig.2.f as we turn on and off the switch, Vs c.f Fig.2.g. Further details of the device operating mode and results characterization will be reported in the talk. We acknowledge financial support from the Petacloud consortium of the Israeli innovation authority. R.G. acknowledges financial support from the Shulamit Aloni fellowship of the Israeli ministry of science.

Publisher Copyright:
© OSA 2020 © 2020 The Author(s)

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10.1364/CLEO_SI.2020.SM2J.6

Cite this

Gherabli, R., Zektzer, R., Grajower, M., Shappir, J., Wofsy, M., Inbar, N., & Levy, U. (2020). Low power electro-optic SRAM based on negative differential resistance. In CLEO: Science and Innovations, CLEO_SI 2020 Article SM2J.6 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2020.SM2J.6

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title = "Low power electro-optic SRAM based on negative differential resistance",

abstract = "We present a new electro-optics data storage device based on the combination of negative differential resistances and optical cavity, remarkable for its simplicity and its complete CMOS compatibility with power consumption around the nanoWatt.",

author = "Rivka Gherabli and Roy Zektzer and Meir Grajower and Joseph Shappir and Menachem Wofsy and Naor Inbar and Uriel Levy",

note = "Funding Information: Finally, we aim to use this bi-stable electro-optical device to create an SRAM memory cell. To demonstrate such operation, we have generated such a cell by simply connecting a bit line between the resistor and the device as depicted in Fig.2.e-g. We applied a writing voltage Vw (Fig.2.e) to bring the device in proximity to one of the stable solutions. When we opened the switch connecting the bit line to the device, Vs, it returned to its stable solution. The two optical levels of transmission corresponding to the two solutions are depicted in Fig.2.f as we turn on and off the switch, Vs c.f Fig.2.g. Further details of the device operating mode and results characterization will be reported in the talk. We acknowledge financial support from the Petacloud consortium of the Israeli innovation authority. R.G. acknowledges financial support from the Shulamit Aloni fellowship of the Israeli ministry of science. Publisher Copyright: {\textcopyright} OSA 2020 {\textcopyright} 2020 The Author(s); CLEO: Science and Innovations, CLEO_SI 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

doi = "10.1364/CLEO_SI.2020.SM2J.6",

language = "American English",

isbn = "9781943580767",

series = "Optics InfoBase Conference Papers",

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booktitle = "CLEO",

}

Gherabli, R, Zektzer, R, Grajower, M, Shappir, J, Wofsy, M, Inbar, N & Levy, U 2020, Low power electro-optic SRAM based on negative differential resistance. in CLEO: Science and Innovations, CLEO_SI 2020., SM2J.6, Optics InfoBase Conference Papers, vol. Part F183-CLEO-SI 2020, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2020, Washington, United States, 10/05/20. https://doi.org/10.1364/CLEO_SI.2020.SM2J.6

Low power electro-optic SRAM based on negative differential resistance. / Gherabli, Rivka; Zektzer, Roy; Grajower, Meir et al.
CLEO: Science and Innovations, CLEO_SI 2020. Optica Publishing Group (formerly OSA), 2020. SM2J.6 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low power electro-optic SRAM based on negative differential resistance

AU - Gherabli, Rivka

AU - Zektzer, Roy

AU - Grajower, Meir

AU - Shappir, Joseph

AU - Wofsy, Menachem

AU - Inbar, Naor

AU - Levy, Uriel

N1 - Funding Information: Finally, we aim to use this bi-stable electro-optical device to create an SRAM memory cell. To demonstrate such operation, we have generated such a cell by simply connecting a bit line between the resistor and the device as depicted in Fig.2.e-g. We applied a writing voltage Vw (Fig.2.e) to bring the device in proximity to one of the stable solutions. When we opened the switch connecting the bit line to the device, Vs, it returned to its stable solution. The two optical levels of transmission corresponding to the two solutions are depicted in Fig.2.f as we turn on and off the switch, Vs c.f Fig.2.g. Further details of the device operating mode and results characterization will be reported in the talk. We acknowledge financial support from the Petacloud consortium of the Israeli innovation authority. R.G. acknowledges financial support from the Shulamit Aloni fellowship of the Israeli ministry of science. Publisher Copyright: © OSA 2020 © 2020 The Author(s)

PY - 2020

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N2 - We present a new electro-optics data storage device based on the combination of negative differential resistances and optical cavity, remarkable for its simplicity and its complete CMOS compatibility with power consumption around the nanoWatt.

AB - We present a new electro-optics data storage device based on the combination of negative differential resistances and optical cavity, remarkable for its simplicity and its complete CMOS compatibility with power consumption around the nanoWatt.

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DO - 10.1364/CLEO_SI.2020.SM2J.6

M3 - Conference contribution

AN - SCOPUS:85095416034

SN - 9781943580767

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optica Publishing Group (formerly OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Low power electro-optic SRAM based on negative differential resistance

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