LPE growth of Cd doped PbTe

Y. Sternberg; N. Yellin; L. Ben-Dor

doi:10.1016/0025-5408(84)90091-6

LPE growth of Cd doped PbTe

Y. Sternberg^*, N. Yellin, L. Ben-Dor

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Cd doped PbTe epilayers were grown on Pb_0.8Sn_0.2Te substrates by liquid phase epitaxy (LPE). The Cd behavior in the solution and the solid (substrate and epilayer) was studied. The dependence of the carrier concentration on Cd doping was investigated.

Original language	English
Pages (from-to)	201-208
Number of pages	8
Journal	Materials Research Bulletin
Volume	19
Issue number	2
DOIs	https://doi.org/10.1016/0025-5408(84)90091-6
State	Published - Feb 1984

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title = "LPE growth of Cd doped PbTe",

abstract = "Cd doped PbTe epilayers were grown on Pb0.8Sn0.2Te substrates by liquid phase epitaxy (LPE). The Cd behavior in the solution and the solid (substrate and epilayer) was studied. The dependence of the carrier concentration on Cd doping was investigated.",

author = "Y. Sternberg and N. Yellin and L. Ben-Dor",

year = "1984",

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doi = "10.1016/0025-5408(84)90091-6",

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AU - Yellin, N.

AU - Ben-Dor, L.

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AB - Cd doped PbTe epilayers were grown on Pb0.8Sn0.2Te substrates by liquid phase epitaxy (LPE). The Cd behavior in the solution and the solid (substrate and epilayer) was studied. The dependence of the carrier concentration on Cd doping was investigated.

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LPE growth of Cd doped PbTe

Abstract

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