LPE growth of PbTe on PbSnTe through stripe openings in CaF₂ coating

PbTe epilayers were grown by the LPE technique on flat and channeled PbSnTe substrates, through stripe openings in CaF₂ coating. Nucleation occurred mainly on the exposed, flat PbSnTe. During the first stage of growth (t_g≤90 s) the growth rate, vertical as well as lateral, was faster than at t_g > 90 s. Lateral overgrowth nucleated at the stripe edges, was observed on the CaF₂ (∼30 μm). In the case of 9 μm deep channels in the PbSnTe, no epitaxy was formed in the channel because of low deposition rate at the PbSnTe-solution interface. The solute deposited on nuclei formed at the channel edges, and grew laterally on both sides, the growth rate being higher for t_g<90 s than for t_g > 90 s. Growth solution was trapped between the PbSnTe and PbTe layer.