LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

N. Cohen*, R. Gardi, G. Sarusi, A. Sa'ar, M. Byloos, A. Bezinger, A. J. SpringThorpe, H. C. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).

Original languageAmerican English
Pages (from-to)253-259
Number of pages7
JournalInfrared Physics and Technology
Volume50
Issue number2-3
DOIs
StatePublished - Apr 2007

Keywords

  • HBT
  • InP
  • QWIP
  • SWIR
  • See-spot
  • Two color

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