Abstract
A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).
Original language | English |
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Pages (from-to) | 253-259 |
Number of pages | 7 |
Journal | Infrared Physics and Technology |
Volume | 50 |
Issue number | 2-3 |
DOIs | |
State | Published - Apr 2007 |
Keywords
- HBT
- InP
- QWIP
- SWIR
- See-spot
- Two color