Magnetic field effect on the free electron-exciton scattering in GaAs/AlGaAs bare quantum wells and in microcavities

A. Qarry, R. Rapaport, G. Ramon, E. Cohen*, Arza Ron, A. Maan, L. N. Pfeiffer

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report on a detailed study of the free electron scattering effects on the (e1:hh1)1S and (e1:lh1)1S excitons in a GaAs quantum well with a variable density two-dimensional electron gas, that is either bare or embedded in a GaAs/AlGaAs microcavity. These effects are studied by measuring the reflection line width of the bare excitons or cavity polaritons as a function of photoexcitation intensity, temperature (2 < T < 80 K) and a perpendicularly applied magnetic field (0 < B < 7 T). This field induces the formation of charged polaritons at temperatures higher than the range of charged exciton existence without a magnetic field. In order to interpret the line-width data observed at high temperatures, when no charged polaritons exist, we developed a theoretical model that is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the scattering rates of bare excitons. The model accounts well for the polariton line-widths dependence on microcavity-photon detuning energy and the electron density.

Original languageAmerican English
Pages (from-to)528-530
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
StatePublished - Jan 2002
Externally publishedYes
Event14th International Conference on the - Prague, Czech Republic
Duration: 30 Jul 20013 Aug 2001

Bibliographical note

Funding Information:
The work at the Technion was done at the Barbara and Norman Seiden Center for Advanced Opto-Electronics Research. It was supported by the United States—Israel Binational Science Foundation (BSF), Jerusalem, Israel.


  • Excitons
  • Luminescence
  • Quantum wells


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