Magnetic field effect on the free electron-exciton scattering in GaAs/AlGaAs bare quantum wells and in microcavities

A. Qarry; R. Rapaport; G. Ramon; E. Cohen; Arza Ron; A. Maan; L. N. Pfeiffer

doi:10.1016/S1386-9477(01)00480-5

Magnetic field effect on the free electron-exciton scattering in GaAs/AlGaAs bare quantum wells and in microcavities

A. Qarry
, R. Rapaport
, G. Ramon
, E. Cohen^*
, Arza Ron
, A. Maan
, L. N. Pfeiffer

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report on a detailed study of the free electron scattering effects on the (e1:hh1)1S and (e1:lh1)1S excitons in a GaAs quantum well with a variable density two-dimensional electron gas, that is either bare or embedded in a GaAs/AlGaAs microcavity. These effects are studied by measuring the reflection line width of the bare excitons or cavity polaritons as a function of photoexcitation intensity, temperature (2 < T < 80 K) and a perpendicularly applied magnetic field (0 < B < 7 T). This field induces the formation of charged polaritons at temperatures higher than the range of charged exciton existence without a magnetic field. In order to interpret the line-width data observed at high temperatures, when no charged polaritons exist, we developed a theoretical model that is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the scattering rates of bare excitons. The model accounts well for the polariton line-widths dependence on microcavity-photon detuning energy and the electron density.

Original language	English
Pages (from-to)	528-530
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00480-5
State	Published - Jan 2002
Externally published	Yes
Event	14th International Conference on the - Prague, Czech Republic Duration: 30 Jul 2001 → 3 Aug 2001

Bibliographical note

Funding Information:
The work at the Technion was done at the Barbara and Norman Seiden Center for Advanced Opto-Electronics Research. It was supported by the United States—Israel Binational Science Foundation (BSF), Jerusalem, Israel.

Keywords

Excitons
Luminescence
Quantum wells

Access to Document

10.1016/S1386-9477(01)00480-5

Cite this

@article{60ad6ac1158046bbab822c87b55347f6,

title = "Magnetic field effect on the free electron-exciton scattering in GaAs/AlGaAs bare quantum wells and in microcavities",

abstract = "We report on a detailed study of the free electron scattering effects on the (e1:hh1)1S and (e1:lh1)1S excitons in a GaAs quantum well with a variable density two-dimensional electron gas, that is either bare or embedded in a GaAs/AlGaAs microcavity. These effects are studied by measuring the reflection line width of the bare excitons or cavity polaritons as a function of photoexcitation intensity, temperature (2 < T < 80 K) and a perpendicularly applied magnetic field (0 < B < 7 T). This field induces the formation of charged polaritons at temperatures higher than the range of charged exciton existence without a magnetic field. In order to interpret the line-width data observed at high temperatures, when no charged polaritons exist, we developed a theoretical model that is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the scattering rates of bare excitons. The model accounts well for the polariton line-widths dependence on microcavity-photon detuning energy and the electron density.",

keywords = "Excitons, Luminescence, Quantum wells",

author = "A. Qarry and R. Rapaport and G. Ramon and E. Cohen and Arza Ron and A. Maan and Pfeiffer, \{L. N.\}",

note = "Funding Information: The work at the Technion was done at the Barbara and Norman Seiden Center for Advanced Opto-Electronics Research. It was supported by the United States—Israel Binational Science Foundation (BSF), Jerusalem, Israel.; 14th International Conference on the ; Conference date: 30-07-2001 Through 03-08-2001",

year = "2002",

month = jan,

doi = "10.1016/S1386-9477(01)00480-5",

language = "אנגלית",

volume = "12",

pages = "528--530",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Magnetic field effect on the free electron-exciton scattering in GaAs/AlGaAs bare quantum wells and in microcavities

AU - Qarry, A.

AU - Rapaport, R.

AU - Ramon, G.

AU - Cohen, E.

AU - Ron, Arza

AU - Maan, A.

AU - Pfeiffer, L. N.

N1 - Funding Information: The work at the Technion was done at the Barbara and Norman Seiden Center for Advanced Opto-Electronics Research. It was supported by the United States—Israel Binational Science Foundation (BSF), Jerusalem, Israel.

PY - 2002/1

Y1 - 2002/1

N2 - We report on a detailed study of the free electron scattering effects on the (e1:hh1)1S and (e1:lh1)1S excitons in a GaAs quantum well with a variable density two-dimensional electron gas, that is either bare or embedded in a GaAs/AlGaAs microcavity. These effects are studied by measuring the reflection line width of the bare excitons or cavity polaritons as a function of photoexcitation intensity, temperature (2 < T < 80 K) and a perpendicularly applied magnetic field (0 < B < 7 T). This field induces the formation of charged polaritons at temperatures higher than the range of charged exciton existence without a magnetic field. In order to interpret the line-width data observed at high temperatures, when no charged polaritons exist, we developed a theoretical model that is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the scattering rates of bare excitons. The model accounts well for the polariton line-widths dependence on microcavity-photon detuning energy and the electron density.

AB - We report on a detailed study of the free electron scattering effects on the (e1:hh1)1S and (e1:lh1)1S excitons in a GaAs quantum well with a variable density two-dimensional electron gas, that is either bare or embedded in a GaAs/AlGaAs microcavity. These effects are studied by measuring the reflection line width of the bare excitons or cavity polaritons as a function of photoexcitation intensity, temperature (2 < T < 80 K) and a perpendicularly applied magnetic field (0 < B < 7 T). This field induces the formation of charged polaritons at temperatures higher than the range of charged exciton existence without a magnetic field. In order to interpret the line-width data observed at high temperatures, when no charged polaritons exist, we developed a theoretical model that is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the scattering rates of bare excitons. The model accounts well for the polariton line-widths dependence on microcavity-photon detuning energy and the electron density.

KW - Excitons

KW - Luminescence

KW - Quantum wells

UR - https://www.scopus.com/pages/publications/0035239555

U2 - 10.1016/S1386-9477(01)00480-5

DO - 10.1016/S1386-9477(01)00480-5

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0035239555

SN - 1386-9477

VL - 12

SP - 528

EP - 530

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - 14th International Conference on the

Y2 - 30 July 2001 through 3 August 2001

ER -

Magnetic field effect on the free electron-exciton scattering in GaAs/AlGaAs bare quantum wells and in microcavities

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Keywords

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