There is an increasing demand for realizing a simple Si based universal memory device working at ambient temperatures. In principle, nonvolatile magnetic memory can operate at low power consumption and high frequencies. However, in order to compete with existing memory technology, size reduction and simplification of the used material systems are essential. In this work, the chiral-induced spin selectivity effect is used along with 30–50 nm ferromagnetic nanoplatelets in order to realize a simple magnetic memory device. The vertical memory is Si compatible, easy to fabricate, and in principle can be scaled down to a single nanoparticle size. Results show clear dual magnetization behavior with threefold enhancement between the one and zero states. The magnetization of the device is accompanied with large avalanche like noise that is ascribed to the redistribution of current densities due to spin accumulation inducing coupling effects between the different nanoplatelets.
Bibliographical noteFunding Information:
Y.P. acknowledges support from the Volkswagen Foundation (VW 88 367), from the 419 Israel Science Foundation (ISF grant no. 1248/10), and from the MOS Israel. D.P. acknowledges support from the Israel Science Foundation (ISF grant 1589/14) and from the Minerva Centre for biohybrid complex systems. D.P. thanks the Etta and Paul Schankerman Chair of Molecular Biomedicine.
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- magnetic memory
- magnetic nanoparticles
- molecular electronics
- self-assembled monolayers