The authors describe laboratory apparatus for deposition of multilayer metal coatings by magnetron sputtering at a constant current with preliminary magnetron ion etching of substrates based on a VUP-4 general-purpose vacuum station. The use of two high-voltage rectifiers permits simultaneous ion etching of substrates and gettering as well as deposition with a bias. The discharge parameters are 400 V at 50 mA for sputtering and 400 V at 6 mA for etching; two layers can be deposited.
|Original language||American English|
|Number of pages||2|
|Journal||Instruments and Experimental Techniques|
|Issue number||4 pt 2|
|State||Published - Feb 1990|