Magnetron sputtering apparatus with ion etching substrates based on VUP-4 vacuum station

The authors describe laboratory apparatus for deposition of multilayer metal coatings by magnetron sputtering at a constant current with preliminary magnetron ion etching of substrates based on a VUP-4 general-purpose vacuum station. The use of two high-voltage rectifiers permits simultaneous ion etching of substrates and gettering as well as deposition with a bias. The discharge parameters are 400 V at 50 mA for sputtering and 400 V at 6 mA for etching; two layers can be deposited.