Manipulating atomic defects in plasmonic vanadium dioxide for superior solar and thermal management

Yujie Ke; Bikun Zhang; Tao Wang; Yaxu Zhong; Tuan Duc Vu; Shancheng Wang; Yang Liu; Shlomo Magdassi; Xingchen Ye; Dongyuan Zhao; Qihua Xiong; Zhimei Sun; Yi Long

doi:10.1039/d1mh00413a

Manipulating atomic defects in plasmonic vanadium dioxide for superior solar and thermal management

Yujie Ke, Bikun Zhang, Tao Wang, Yaxu Zhong, Tuan Duc Vu, Shancheng Wang, Yang Liu, Shlomo Magdassi, Xingchen Ye, Dongyuan Zhao, Qihua Xiong, Zhimei Sun^*, Yi Long^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Vanadium dioxide (VO2) is a unique active plasmonic material due to its intrinsic metal-insulator transition, remaining less explored. Herein, we pioneer a method to tailor the VO2 surface plasmon by manipulating its atomic defects and establish a universal quantitative understanding based on seven representative defective VO2 systems. Record high tunability is achieved for the localized surface plasmon resonance (LSPR) energy (0.66-1.16 eV) and transition temperature range (40-100 °C). The Drude model and density functional theory reveal that the charge of cations plays a dominant role in the numbers of valence electrons to determine the free electron concentration. We further demonstrate their superior performances in extensive unconventional plasmonic applications including energy-saving smart windows, wearable camouflage devices, and encryption inks.

Original language	English
Pages (from-to)	1700-1710
Number of pages	11
Journal	Materials Horizons
Volume	8
Issue number	6
DOIs	https://doi.org/10.1039/d1mh00413a
State	Published - Jun 2021

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

Access to Document

10.1039/d1mh00413a

Cite this

@article{64ac872220f249db80c272084ad62684,

title = "Manipulating atomic defects in plasmonic vanadium dioxide for superior solar and thermal management",

abstract = "Vanadium dioxide (VO2) is a unique active plasmonic material due to its intrinsic metal-insulator transition, remaining less explored. Herein, we pioneer a method to tailor the VO2 surface plasmon by manipulating its atomic defects and establish a universal quantitative understanding based on seven representative defective VO2 systems. Record high tunability is achieved for the localized surface plasmon resonance (LSPR) energy (0.66-1.16 eV) and transition temperature range (40-100 °C). The Drude model and density functional theory reveal that the charge of cations plays a dominant role in the numbers of valence electrons to determine the free electron concentration. We further demonstrate their superior performances in extensive unconventional plasmonic applications including energy-saving smart windows, wearable camouflage devices, and encryption inks.",

author = "Yujie Ke and Bikun Zhang and Tao Wang and Yaxu Zhong and Vu, {Tuan Duc} and Shancheng Wang and Yang Liu and Shlomo Magdassi and Xingchen Ye and Dongyuan Zhao and Qihua Xiong and Zhimei Sun and Yi Long",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2021",

month = jun,

doi = "10.1039/d1mh00413a",

language = "אנגלית",

volume = "8",

pages = "1700--1710",

journal = "Materials Horizons",

issn = "2051-6347",

publisher = "Royal Society of Chemistry",

number = "6",

}

TY - JOUR

T1 - Manipulating atomic defects in plasmonic vanadium dioxide for superior solar and thermal management

AU - Ke, Yujie

AU - Zhang, Bikun

AU - Wang, Tao

AU - Zhong, Yaxu

AU - Vu, Tuan Duc

AU - Wang, Shancheng

AU - Liu, Yang

AU - Magdassi, Shlomo

AU - Ye, Xingchen

AU - Zhao, Dongyuan

AU - Xiong, Qihua

AU - Sun, Zhimei

AU - Long, Yi

PY - 2021/6

Y1 - 2021/6

N2 - Vanadium dioxide (VO2) is a unique active plasmonic material due to its intrinsic metal-insulator transition, remaining less explored. Herein, we pioneer a method to tailor the VO2 surface plasmon by manipulating its atomic defects and establish a universal quantitative understanding based on seven representative defective VO2 systems. Record high tunability is achieved for the localized surface plasmon resonance (LSPR) energy (0.66-1.16 eV) and transition temperature range (40-100 °C). The Drude model and density functional theory reveal that the charge of cations plays a dominant role in the numbers of valence electrons to determine the free electron concentration. We further demonstrate their superior performances in extensive unconventional plasmonic applications including energy-saving smart windows, wearable camouflage devices, and encryption inks.

AB - Vanadium dioxide (VO2) is a unique active plasmonic material due to its intrinsic metal-insulator transition, remaining less explored. Herein, we pioneer a method to tailor the VO2 surface plasmon by manipulating its atomic defects and establish a universal quantitative understanding based on seven representative defective VO2 systems. Record high tunability is achieved for the localized surface plasmon resonance (LSPR) energy (0.66-1.16 eV) and transition temperature range (40-100 °C). The Drude model and density functional theory reveal that the charge of cations plays a dominant role in the numbers of valence electrons to determine the free electron concentration. We further demonstrate their superior performances in extensive unconventional plasmonic applications including energy-saving smart windows, wearable camouflage devices, and encryption inks.

UR - http://www.scopus.com/inward/record.url?scp=85107886918&partnerID=8YFLogxK

U2 - 10.1039/d1mh00413a

DO - 10.1039/d1mh00413a

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

C2 - 34846500

AN - SCOPUS:85107886918

SN - 2051-6347

VL - 8

SP - 1700

EP - 1710

JO - Materials Horizons

JF - Materials Horizons

IS - 6

ER -

Manipulating atomic defects in plasmonic vanadium dioxide for superior solar and thermal management

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this