Mapping the thickness of conducting layers by a mm-wave near-field microscope

A. F. Lann; M. Golosovsky; D. Davidov; A. Frenkel

Mapping the thickness of conducting layers by a mm-wave near-field microscope

A. F. Lann^*, M. Golosovsky, D. Davidov, A. Frenkel

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We describe a quantitative contactless technique of mapping resistivity of conducting films using a 80 GHz near-field scanning probe. We report (i) a capacitive method of maintaining a constant probe-sample separation; (ii) a quantitative measurements of near-field mm-wave reflectivity of conducting films.

Original language	English
Pages (from-to)	1337-1340
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
State	Published - 1998
Event	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 7 Jun 1998 → 12 Jun 1998

Cite this

@article{ca5fb35e12c94c6ebdd3069ba5288b3d,

title = "Mapping the thickness of conducting layers by a mm-wave near-field microscope",

abstract = "We describe a quantitative contactless technique of mapping resistivity of conducting films using a 80 GHz near-field scanning probe. We report (i) a capacitive method of maintaining a constant probe-sample separation; (ii) a quantitative measurements of near-field mm-wave reflectivity of conducting films.",

author = "Lann, \{A. F.\} and M. Golosovsky and D. Davidov and A. Frenkel",

year = "1998",

language = "אנגלית",

volume = "3",

pages = "1337--1340",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 07-06-1998 Through 12-06-1998",

}

TY - JOUR

T1 - Mapping the thickness of conducting layers by a mm-wave near-field microscope

AU - Lann, A. F.

AU - Golosovsky, M.

AU - Davidov, D.

AU - Frenkel, A.

PY - 1998

Y1 - 1998

N2 - We describe a quantitative contactless technique of mapping resistivity of conducting films using a 80 GHz near-field scanning probe. We report (i) a capacitive method of maintaining a constant probe-sample separation; (ii) a quantitative measurements of near-field mm-wave reflectivity of conducting films.

AB - We describe a quantitative contactless technique of mapping resistivity of conducting films using a 80 GHz near-field scanning probe. We report (i) a capacitive method of maintaining a constant probe-sample separation; (ii) a quantitative measurements of near-field mm-wave reflectivity of conducting films.

UR - https://www.scopus.com/pages/publications/0031641912

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0031641912

SN - 0149-645X

VL - 3

SP - 1337

EP - 1340

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 7 June 1998 through 12 June 1998

ER -

Mapping the thickness of conducting layers by a mm-wave near-field microscope

Abstract

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