TY - JOUR
T1 - Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions
AU - Nissan-Cohen, Y.
AU - Shappir, J.
AU - Frohman-Bentchkowsky, D.
PY - 1985/7
Y1 - 1985/7
N2 - The Fowler-Nordheim (FN) tunneling of electrons into thermal SiO2 at high levels of injection has been studied. A modified I-V measurement technique has been developed to correct for charge trapping phenomena, which are unavoidable under the high field and current conditions. It is shown that the results fit a universal FN type current-field dependence which is insensitive to oxide thickness and free of the commonly observed hysteresis phenomena.
AB - The Fowler-Nordheim (FN) tunneling of electrons into thermal SiO2 at high levels of injection has been studied. A modified I-V measurement technique has been developed to correct for charge trapping phenomena, which are unavoidable under the high field and current conditions. It is shown that the results fit a universal FN type current-field dependence which is insensitive to oxide thickness and free of the commonly observed hysteresis phenomena.
UR - http://www.scopus.com/inward/record.url?scp=0022101997&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(85)90022-X
DO - 10.1016/0038-1101(85)90022-X
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:0022101997
SN - 0038-1101
VL - 28
SP - 717
EP - 720
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7
ER -