Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

Y. Nissan-Cohen; J. Shappir; D. Frohman-Bentchkowsky

doi:10.1016/0038-1101(85)90022-X

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

Y. Nissan-Cohen^*
, J. Shappir
, D. Frohman-Bentchkowsky

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The Fowler-Nordheim (FN) tunneling of electrons into thermal SiO₂ at high levels of injection has been studied. A modified I-V measurement technique has been developed to correct for charge trapping phenomena, which are unavoidable under the high field and current conditions. It is shown that the results fit a universal FN type current-field dependence which is insensitive to oxide thickness and free of the commonly observed hysteresis phenomena.

Original language	English
Pages (from-to)	717-720
Number of pages	4
Journal	Solid-State Electronics
Volume	28
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(85)90022-X
State	Published - Jul 1985

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title = "Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions",

abstract = "The Fowler-Nordheim (FN) tunneling of electrons into thermal SiO2 at high levels of injection has been studied. A modified I-V measurement technique has been developed to correct for charge trapping phenomena, which are unavoidable under the high field and current conditions. It is shown that the results fit a universal FN type current-field dependence which is insensitive to oxide thickness and free of the commonly observed hysteresis phenomena.",

author = "Y. Nissan-Cohen and J. Shappir and D. Frohman-Bentchkowsky",

year = "1985",

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AU - Nissan-Cohen, Y.

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N2 - The Fowler-Nordheim (FN) tunneling of electrons into thermal SiO2 at high levels of injection has been studied. A modified I-V measurement technique has been developed to correct for charge trapping phenomena, which are unavoidable under the high field and current conditions. It is shown that the results fit a universal FN type current-field dependence which is insensitive to oxide thickness and free of the commonly observed hysteresis phenomena.

AB - The Fowler-Nordheim (FN) tunneling of electrons into thermal SiO2 at high levels of injection has been studied. A modified I-V measurement technique has been developed to correct for charge trapping phenomena, which are unavoidable under the high field and current conditions. It is shown that the results fit a universal FN type current-field dependence which is insensitive to oxide thickness and free of the commonly observed hysteresis phenomena.

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Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

Abstract

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