Measurements of the hall coefficient in the vicinity of the anderson transition

E. Tousson*, Z. Ovadyahu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Hall coefficient of 3D, crystalline indium-oxide films has been measured as a function of temperature and disorder. It is found that the Hall coefficient remains virtually constant as the temperature is varied between 12 K and room temperature for samples with KFl values of 0.1 to ≈3.4.

Original languageEnglish
Pages (from-to)187-189
Number of pages3
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume109
Issue number4
DOIs
StatePublished - 20 May 1985
Externally publishedYes

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