Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05-1.5-keV photon-energy range

M. J. May; M. Finkenthal; S. P. Regan; H. W. Moos; K. W. Wenzel

doi:10.1364/AO.34.004637

Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05-1.5-keV photon-energy range

M. J. May, M. Finkenthal, S. P. Regan, H. W. Moos, K. W. Wenzel

Research output: Contribution to journal › Article › peer-review

Abstract

The measured photocurrents from two different p-n-junction silicon photodiodes at 170-Å (73-eV) and at 8.34-Å (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low-resistivity silicon (70-100 Ω cm), and the other is fabricated on high-resistivity silicon (>2 × 10⁴ Ω cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 ± 4 at 8.34 Å and 12.5 ± 2 at 170 Å.

Original language	English
Pages (from-to)	4637-4639
Number of pages	3
Journal	Applied Optics
Volume	34
Issue number	22
DOIs	https://doi.org/10.1364/AO.34.004637
State	Published - Aug 1995
Externally published	Yes

Keywords

Measured enhanced gain
Reverse-biased diode
Soft-x-ray photodetector
XUV photodiode

Access to Document

10.1364/AO.34.004637

Cite this

@article{4abcd5301b9c4978861f5ff67d9164c0,

title = "Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05-1.5-keV photon-energy range",

abstract = "The measured photocurrents from two different p-n-junction silicon photodiodes at 170-{\AA} (73-eV) and at 8.34-{\AA} (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low-resistivity silicon (70-100 Ω cm), and the other is fabricated on high-resistivity silicon (>2 × 104 Ω cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 ± 4 at 8.34 {\AA} and 12.5 ± 2 at 170 {\AA}.",

keywords = "Measured enhanced gain, Reverse-biased diode, Soft-x-ray photodetector, XUV photodiode",

author = "May, {M. J.} and M. Finkenthal and Regan, {S. P.} and Moos, {H. W.} and Wenzel, {K. W.}",

year = "1995",

month = aug,

doi = "10.1364/AO.34.004637",

language = "אנגלית",

volume = "34",

pages = "4637--4639",

journal = "Applied Optics",

issn = "1559-128X",

publisher = "Optica Publishing Group",

number = "22",

}

TY - JOUR

T1 - Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05-1.5-keV photon-energy range

AU - May, M. J.

AU - Finkenthal, M.

AU - Regan, S. P.

AU - Moos, H. W.

AU - Wenzel, K. W.

PY - 1995/8

Y1 - 1995/8

N2 - The measured photocurrents from two different p-n-junction silicon photodiodes at 170-Å (73-eV) and at 8.34-Å (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low-resistivity silicon (70-100 Ω cm), and the other is fabricated on high-resistivity silicon (>2 × 104 Ω cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 ± 4 at 8.34 Å and 12.5 ± 2 at 170 Å.

AB - The measured photocurrents from two different p-n-junction silicon photodiodes at 170-Å (73-eV) and at 8.34-Å (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low-resistivity silicon (70-100 Ω cm), and the other is fabricated on high-resistivity silicon (>2 × 104 Ω cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 ± 4 at 8.34 Å and 12.5 ± 2 at 170 Å.

KW - Measured enhanced gain

KW - Reverse-biased diode

KW - Soft-x-ray photodetector

KW - XUV photodiode

UR - http://www.scopus.com/inward/record.url?scp=84975538431&partnerID=8YFLogxK

U2 - 10.1364/AO.34.004637

DO - 10.1364/AO.34.004637

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84975538431

SN - 1559-128X

VL - 34

SP - 4637

EP - 4639

JO - Applied Optics

JF - Applied Optics

IS - 22

ER -

Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05-1.5-keV photon-energy range

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this