Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge

T. V. Torchynska; J. Aguilar-Hernandez; L. Schacht Hernández; G. Polupan; Y. Goldstein; A. Many; J. Jedrzejewski; A. Kolobov

doi:10.1016/S0167-9317(03)00029-7

Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge

T. V. Torchynska^*
, J. Aguilar-Hernandez
, L. Schacht Hernández
, G. Polupan
, Y. Goldstein
, A. Many
, J. Jedrzejewski
, A. Kolobov

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

34 Scopus citations

Abstract

Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.

Original language	English
Pages (from-to)	83-90
Number of pages	8
Journal	Microelectronic Engineering
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(03)00029-7
State	Published - Apr 2003
Event	IUMRS-ICEM 2002 - Xi an, China Duration: 10 Jun 2002 → 14 Jun 2002

Keywords

Photoluminescence
Silicon germanium nanocrystals

Access to Document

10.1016/S0167-9317(03)00029-7

Cite this

@article{1c87b821d26645d9b485519e570215a9,

title = "Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge",

abstract = "Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.",

keywords = "Photoluminescence, Silicon germanium nanocrystals",

author = "Torchynska, \{T. V.\} and J. Aguilar-Hernandez and \{Schacht Hern{\'a}ndez\}, L. and G. Polupan and Y. Goldstein and A. Many and J. Jedrzejewski and A. Kolobov",

year = "2003",

month = apr,

doi = "10.1016/S0167-9317(03)00029-7",

language = "אנגלית",

volume = "66",

pages = "83--90",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

note = "IUMRS-ICEM 2002 ; Conference date: 10-06-2002 Through 14-06-2002",

}

TY - JOUR

T1 - Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge

AU - Torchynska, T. V.

AU - Aguilar-Hernandez, J.

AU - Schacht Hernández, L.

AU - Polupan, G.

AU - Goldstein, Y.

AU - Many, A.

AU - Jedrzejewski, J.

AU - Kolobov, A.

PY - 2003/4

Y1 - 2003/4

N2 - Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.

AB - Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.

KW - Photoluminescence

KW - Silicon germanium nanocrystals

UR - https://www.scopus.com/pages/publications/0037394914

U2 - 10.1016/S0167-9317(03)00029-7

DO - 10.1016/S0167-9317(03)00029-7

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0037394914

SN - 0167-9317

VL - 66

SP - 83

EP - 90

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - IUMRS-ICEM 2002

Y2 - 10 June 2002 through 14 June 2002

ER -

Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this